Development of hole conductivity of CuSCN by adding Mn

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@article{1703320,
      author = {P. Samarasekara, H.M.K.L. Hathurusingha, P.G.D.C.K. Karunarathna},
      title = {Development of hole conductivity of CuSCN by adding Mn},
      journal = {Iconic Research And Engineering Journals},
      year = {2022},
      volume = {5},
      number = {10},
      pages = {6-12},
      issn = {2456-8880},
      url = {https://www.irejournals.com/formatedpaper/1703320.pdf},
      abstract = {Pure CuSCN thin films and Manganese doped CuSCN thin films were prepared using the doctor blade method. Electrical, optical, and structural properties of coated thin films were characterized. The variation of the electrical conductivity was investigated by using pure CuSCN samples and CuSCN samples with different Mn mass percentages. Mn mass percentage in CuSCN was varied from 2 to 10% in steps of 2%. The samples were subsequently annealed at 80 0C for 15 minutes. Structural and optical properties were characterized by means of XRD and UV visible spectrometer, respectively. According to the sheet resistance value for unit area of thin films, 6% Mn mass percentage added CuSCN sample exhibited the highest conductivity value, and conductivity gradually increased with Mn concentration in samples up to the doping concentration of 6%. According to the XRD data, crystalline size decreased with the doping of Mn. All the thin films exhibited absorbance and transmittance properties in the visible wavelength region. The calculated optical energy band gap of CuSCN is 3.18 eV. This produced Mn-doped CuSCN layer can be used as an efficient HTM layer in many applications. },
      keywords = {Copper thiocyanate, electrical conductivity, Manganese, optical band gap},
      month = {April},
  }