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Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent

Uche Godswill Nwokeke Joseph Ijeoma Onwuemeka Nobert Chibuzor Nwulu

Subject area: Physical Sciences and Environment  ·  Area of research: Solid Physics

DOI: 10.64388/IREV9I12-1719228

Abstract

ZnO:Cu thin films were successfully deposited on glass substrates by Successive Ionic layer adsorption Reaction method. The chemical compositions and thickness were obtained by Rutherford backscattering spectrometer. Samples B1 and B2 have elemental compositions of Cu:6.68%, O:23.72%, Zn:13.60% and Cu:5.14%, O:25.45%, Zn:13.42% respectively. The films optical properties were characterized using UV double beam spectrophotometer series 1800, for transmittance measurements and other optical properties such as Absorbance, reflectance, absorption coefficient, refractive index, were determined using appropriate equations. The Transmittance increases with increasing wavelength (42%-61%) for B1 and B2(49%-63) at the UV regions of electromagnetic spectrum for the two samples. The SILAR process allowed for the controlled incorporation of Cu ions into the ZnO lattice, resulting in a tunable band gap and enhanced optical properties. The doping concentration was systematically varied to optimize the performance of the ZnO:Cu thin films for optoelectronic applications, such as UV-sensitive photodetectors and light-emitting diodes (LEDs). B1 and B2 have high optical energy band gaps of 3.40eV and 3.15eV with average of 3.30eV which make them suitable material for optoelectronic applications and transparent electrodes.

Keywords

Transmittance, Band Gap, Spectrophotometer, Absorbance, Reflectance

References

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[4] Mohsin Khan, Conceptualization, Methodology, software, Ghazi A.N, validation, formal analysis, investigation (2023) Investigation of Photoluminescence and Optoelectronics Properties of Transition Metal-Doped ZnO Thin Films. National library of Medicine.

[5] Jana, S., Srivastava, B.B., Pradhan, N. J. (2011) Correlation of Dopant States and Host Bandgap in Dual-Doped Semiconductor Nanocrystals. Journal of Physical Chemistry Letters 2 (14), 1747–1752. DOI: 10.1021/jz200673q

[6] Johari, P and Shenoy, V. (2012). Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. Journal of ACS nanotechnology 6 (6) 5449 – 5456

[7] Onwuemeka, J.I., Eze, F.C. and Ndukwe, I.C. (2017), The study of chemically deposited ZnO thin films for possible device applications. Journal of Innovation in Science and Mathematics. 5 (3) 100-110.

[8] Onwuemeka, J.I., Nwofor, O.K., Nwulu, N.C., Nwosu, I.E., Ezike, F.M. and Obizo, C.G. (2014), The optical study ZnO thin films at different times of annealing and varying temperatures prepared by chemical deposition. IOSR Journal of Applied Physics: 6(1) 47-51.

[9] Onwuemeka J.I. and Nwulu N.C. (2017), The study of the deposition, composition and optical properties of Cu2O thin films at 100oC of NaOH solution and annealed at 250oC for 1hour prepared by Solution Growth Technique. Journal of innovative research and knowledge, 2 (5) 59-71.

[10] Onwuemeka, J.I. and Nwulu, N.C. (2017), The study of the deposition, compositions and optical properties of CdO thin films at 60oC-100oC of NaOH solution and annealed at 200oC for 1hour and 3hours, prepared by Solution Growth Technique. Journal of innovative research and knowledge, 2 (5) 29-35.

[11] Joseph Ijeoma Onwuemeka Azubuike Josiah Ekpunobi and Peter Ifeanyi Ekwo (2019) Synthesis ZnSnO4 Alloyed Thin Films for Surface Coatings, Solar Energy Conversion and Optoelectronic Applications. American Journal of Materials Research, 6(1) 1-10.

[12] Rao, M. C. (2013), A Brief Survey on Basic Properties of Thin Films for Device Application. International Journal of Modern Physics 22: 576–582.

[13] Joseph Ijeoma Onwuemeka, Okechukwu Kelechi Nwofor, Ngozi Patricia Ebosie (2021) Optical Properties of CuAl2S Alloyed Thin Films Prepared Using Enhanced Successive Ionic Layer Adsorption and Reaction Method. International Journal of Research and Innovation in Applied Science 6 (11) 95-99.

[14] Joseph Ijeoma Onwuemeka, Doris Nwakaego Ndubueze, Ngozi Patricia Ebosie, Uche Godswill Nwokeke, Ruth Chinyere Godwin, Izuchukwu Monday Nwaemene, Loveday Tochukwu Ogbonna, Vitalis Chukwunonso Anozie (2024) Dual solution synthesis of Al doped CuS thin films for optoelectronic and photovoltaic applications. World Journal of Advanced Research and Reviews 22(2) 1535-1542.

[15] J.I. Onwuemeka (2020) Composition and Optical Properties of Quaternary Alloy of PbCuSO4 Thin Films Prepared by Advanced SILAR Deposition Technique. International Journal of Scientific Research in Physics and Applied Science Vol. 5Issue 7 PP 167-170.

[16] Joseph Ijeoma Onwuemeka, Azubuike Josiah Ekpunobi (2018) Synthesis of CdO: SnO2 alloyed thin films for solar energy conversion and optoelectronic applications. Journal of Materials Science: Materials in Electronics 29 9176-9183.

How to cite this paper

Uche Godswill Nwokeke, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu "Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent" Iconic Research And Engineering Journals Volume 9 Issue 12 2026 Page 3114-3119 https://doi.org/10.64388/IREV9I12-1719228
Uche Godswill Nwokeke, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu "Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent" Iconic Research And Engineering Journals, vol. 9, no. 12, Jun. 2026, doi: https://doi.org/10.64388/IREV9I12-1719228
Uche Godswill Nwokeke, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu (2026). Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent. Iconic Research And Engineering Journals, 9(12). doi: https://doi.org/10.64388/IREV9I12-1719228
Uche Godswill Nwokeke, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu "Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent" Iconic Research And Engineering Journals, vol. 9, no. 12, Jun. 2026. Crossref, https://doi.org/10.64388/IREV9I12-1719228
@article{1719228,
      author = {Uche Godswill Nwokeke, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu},
      title = {Optical Characterization of Cu-doped ZnO Nano Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) Using EDTA as Complexing Agent},
      journal = {Iconic Research And Engineering Journals},
      year = {2026},
      volume = {9},
      number = {12},
      pages = {3114-3119},
      issn = {2456-8880},
      url = {https://www.irejournals.com/formatedpaper/1719228.pdf},
      abstract = {ZnO:Cu thin films were successfully deposited on glass substrates by Successive Ionic layer adsorption Reaction method. The chemical compositions and thickness were obtained by Rutherford backscattering spectrometer. Samples B1 and B2 have elemental compositions of Cu:6.68%, O:23.72%, Zn:13.60% and Cu:5.14%, O:25.45%, Zn:13.42% respectively. The films optical properties were characterized using UV double beam spectrophotometer series 1800, for transmittance measurements and other optical properties such as Absorbance, reflectance, absorption coefficient, refractive index, were determined using appropriate equations. The Transmittance increases with increasing wavelength (42%-61%) for B1 and B2(49%-63) at the UV regions of electromagnetic spectrum for the two samples. The SILAR process allowed for the controlled incorporation of Cu ions into the ZnO lattice, resulting in a tunable band gap and enhanced optical properties. The doping concentration was systematically varied to optimize the performance of the ZnO:Cu thin films for optoelectronic applications, such as UV-sensitive photodetectors and light-emitting diodes (LEDs). B1 and B2 have high optical energy band gaps of 3.40eV and 3.15eV with average of 3.30eV which make them suitable material for optoelectronic applications and transparent electrodes.},
      keywords = {Transmittance, Band Gap, Spectrophotometer, Absorbance, Reflectance},
      month = {June},
      doi = {https://doi.org/10.64388/IREV9I12-1719228}
  }