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Characterization of CdO:Cu Nano Thin Films Prepared Using Dual Solution Synthesis for possible Photonic Devices and Optoelectronic Applications
Subject area: Science,Engineering and Technology · Area of research: Nano-Materials
DOI: https://doi.org/10.64388/IREV10I2-1722110
Abstract
CdO:Cu thin films were successfully deposited on glass substrates by Successive Ionic layer adsorption Reaction method. The chemical compositions and thickness were obtained by Rutherford backscattering spectrometer. Samples C1 and C2 have elemental compositions of Cu:1.64%, O:56.00%, Cd:6.35% and Cu:1.57%, O:53.00%, Cd:7.50% respectively. The films optical properties were characterized using UV double beam spectrophotometer series 1800, for transmittance measurements and other optical properties such as Absorbance, reflectance, absorption coefficient, refractive index, were determined using appropriate equations. The transmittance spectrum shows that the films of samples C1(black)) and C2(red) have good transparency in the UV (16%-60%) for sample C1 and good transmittance (27%-70%) for sample C2 in the wavelength range (320nm-400nm). The high transmittance (61%-59%) for sample C1 from the visible region(400nm-700nm), becomes almost linear through the near infrared region of electromagnetic spectrum. The transmittance of sample C2 increases as wavelength increases up to the near infrared region of electromagnetic. In the near-infrared region, sample C2 has high transmittance (81%-85%) within the wavelength of 700nm- 1000nm of the region of electromagnetic spectrum. This makes these alloyed films good materials for UV filter and transparent electrode. The energy band gaps of samples C1 and C2 are evaluated by extrapolating the linear portion of the plot (αh)2 against photon energy hat (αh)2 = 0 where α is the absorption coefficient. The direct band gap values of 3.80eV and 3.75eV are obtained for samples C1 and C2 respectively. The average band gap value 3.78eV. The wide band gap obtained in this work makes the alloy of CdO:Cu a good material for the production of laser diodes and light emitting diodes (LEDs) used to produce field effect transistors where P-n junction may not be required if produced for solar applications. It can also be used to produce field effect transistors where P-n junction may not be required if produced for solar applications.
Keywords
Transmittance, Band gap, Spectrophotometer, Absorbance, Reflectance
References
[1] An Investigation of SILAR Grown CdO Thin Films Rajini Murugesan, Karunakaran Marimuthu, Kasirajan Kasinathan, Maheswari Sathiah, Chandramohan Rathinam (2019) Iranian Journal of Chemistry and Chemical Engineering 38(4) 11-17. 10.30492/ijcce.2019.31717.
[2] M.Mahaboob Beevia, M.Anusuyab, V.Saravananc (2010) Characterization of CdO Thin Films Prepared By SILAR Deposition. International Journal of Chemical Engineering and Applications 1(2): 151-154 DOI:10.7763/IJCEA.2010.V1.26
[3] Tuba Çayir Taşdemi̇rci̇ (2025) SILAR growth of pure CdO and copper-doped CdO thin films: Structural, optical and electrical properties. Materials Chemistry and Physics 346(1) 131320, https://doi.org/10.1016/j
[4] Jana, S., Srivastava, B.B., Pradhan, N. J. (2011) Correlation of Dopant States and Host Bandgap in Dual-Doped Semiconductor Nanocrystals. Journal of Physical Chemistry Letters 2 (14), 1747–1752. DOI: 10.1021/jz200673q
[5] Johari, P and Shenoy, V. (2012). Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. Journal of ACS nanotechnology 6 (6) 5449 – 5456
[6] Onwuemeka, J.I. and Nwulu, N.C. (2017), The study of the deposition, compositions and optical properties of CdO thin films at 60oC-100oC of NaOH solution and annealed at 200oC for 1hour and 3hours, prepared by Solution Growth Technique. Journal of innovative research and knowledge, 2 (5) 29-35.
[7] Rao, M. C. (2013), A Brief Survey On Basic Properties Of Thin Films For Device Application. International Journal of Modern Physics 22 : 576–582.
[8] Joseph Ijeoma Onwuemeka, Okechukwu Kelechi Nwofor, Ngozi Patricia Ebosie (2021) Optical Properties of CuAl2S Alloyed Thin Films Prepared Using Enhanced Successive Ionic Layer Adsorption and Reaction Method. International Journal of Research and Innovation in Applied Science 6 (11) 95-99.
[9] Joseph Ijeoma Onwuemeka, Doris Nwakaego Ndubueze, Ngozi Patricia Ebosie, Uche Godswill Nwokeke, Ruth Chinyere Godwin, Izuchukwu Monday Nwaemene, Loveday Tochukwu Ogbonna, Vitalis Chukwunonso Anozie (2024) Dual solution synthesis of Al doped CuS thin films for optoelectronic and photovoltaic applications. World Journal of Advanced Research and Reviews 22(2) 1535-1542.
[10] Joseph Ijeoma Onwuemeka, Azubuike Josiah Ekpunobi (2018) Synthesis of CdO:SnO2 alloyed thin films for solar energy conversion and optoelectronic applications. Journal of Materials Science: Materials in Electronics 29 9176-9183.
How to cite this paper
@article{1722110,
author = {Jude Okanandu Ozuomba, Joseph Ijeoma Onwuemeka, Nobert Chibuzor Nwulu},
title = {Characterization of CdO:Cu Nano Thin Films Prepared Using Dual Solution Synthesis for possible Photonic Devices and Optoelectronic Applications},
journal = {Iconic Research And Engineering Journals},
year = {2026},
volume = {10},
number = {2},
pages = {403-409},
issn = {2456-8880},
url = {https://www.irejournals.com/formatedpaper/1722110.pdf},
abstract = {CdO:Cu thin films were successfully deposited on glass substrates by Successive Ionic layer adsorption Reaction method. The chemical compositions and thickness were obtained by Rutherford backscattering spectrometer. Samples C1 and C2 have elemental compositions of Cu:1.64%, O:56.00%, Cd:6.35% and Cu:1.57%, O:53.00%, Cd:7.50% respectively. The films optical properties were characterized using UV double beam spectrophotometer series 1800, for transmittance measurements and other optical properties such as Absorbance, reflectance, absorption coefficient, refractive index, were determined using appropriate equations. The transmittance spectrum shows that the films of samples C1(black)) and C2(red) have good transparency in the UV (16%-60%) for sample C1 and good transmittance (27%-70%) for sample C2 in the wavelength range (320nm-400nm). The high transmittance (61%-59%) for sample C1 from the visible region(400nm-700nm), becomes almost linear through the near infrared region of electromagnetic spectrum. The transmittance of sample C2 increases as wavelength increases up to the near infrared region of electromagnetic. In the near-infrared region, sample C2 has high transmittance (81%-85%) within the wavelength of 700nm- 1000nm of the region of electromagnetic spectrum. This makes these alloyed films good materials for UV filter and transparent electrode. The energy band gaps of samples C1 and C2 are evaluated by extrapolating the linear portion of the plot (αh)2 against photon energy hat (αh)2 = 0 where α is the absorption coefficient. The direct band gap values of 3.80eV and 3.75eV are obtained for samples C1 and C2 respectively. The average band gap value 3.78eV. The wide band gap obtained in this work makes the alloy of CdO:Cu a good material for the production of laser diodes and light emitting diodes (LEDs) used to produce field effect transistors where P-n junction may not be required if produced for solar applications. It can also be used to produce field effect transistors where P-n junction may not be required if produced for solar applications.},
keywords = {Transmittance, Band gap, Spectrophotometer, Absorbance, Reflectance},
month = {August},
doi = {https://doi.org/10.64388/IREV10I2-1722110}
}