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Design of Rectenna for Wireless Energy Harvesting
Subject area: Science,Engineering and Technology · Area of research: RF and MIcrowave
DOI: https://doi.org/10.64388/IREV10I2-1722253
Abstract
A two-diode series-shunt rectifier operating at 2.1 GHz was designed, fabricated, and experimentally characterized for wireless power transfer. The circuit uses SMS7630 low-barrier Schottky diodes, distributed microstrip matching sections, a 1.0 µF output capacitor, and a resistive load. Harmonic-balance analysis was performed with a 2.1 GHz single-tone source, while scattering parameters were evaluated from 2.0 to 2.2 GHz. Input power was swept from −25 to +25 dBm and commercially available load resistances from 1 to 10 kΩ were examined. Simulation predicted a maximum RF-to-DC conversion efficiency of 27.7% at +5 dBm with a 5.6 kΩ load. Under the same nominal input-power and load conditions, the fabricated rectifier achieved a measured peak efficiency of 26.9%. The close agreement supports the two-diode series-shunt topology for targeted WPT at moderate RF input power.
Keywords
RF-To-DC Conversion, Schottky Diode, Series-Shunt Rectifier, Wireless Power Transfer.
How to cite this paper
@article{1722253,
author = {Pradeep Dhanawade, Shivajirao Sangale},
title = {Design of Rectenna for Wireless Energy Harvesting},
journal = {Iconic Research And Engineering Journals},
year = {2026},
volume = {10},
number = {2},
pages = {1219-1222},
issn = {2456-8880},
url = {https://www.irejournals.com/formatedpaper/1722253.pdf},
abstract = {A two-diode series-shunt rectifier operating at 2.1 GHz was designed, fabricated, and experimentally characterized for wireless power transfer. The circuit uses SMS7630 low-barrier Schottky diodes, distributed microstrip matching sections, a 1.0 µF output capacitor, and a resistive load. Harmonic-balance analysis was performed with a 2.1 GHz single-tone source, while scattering parameters were evaluated from 2.0 to 2.2 GHz. Input power was swept from −25 to +25 dBm and commercially available load resistances from 1 to 10 kΩ were examined. Simulation predicted a maximum RF-to-DC conversion efficiency of 27.7% at +5 dBm with a 5.6 kΩ load. Under the same nominal input-power and load conditions, the fabricated rectifier achieved a measured peak efficiency of 26.9%. The close agreement supports the two-diode series-shunt topology for targeted WPT at moderate RF input power.},
keywords = {RF-To-DC Conversion, Schottky Diode, Series-Shunt Rectifier, Wireless Power Transfer.},
month = {August},
doi = {https://doi.org/10.64388/IREV10I2-1722253}
}