Studies of Silicon Quantum Dots Thin Films Deposited Under Disparate Ambient Argon Pressures

• Author(s): Archana Srivastava
• Paper ID: 1714667
• Page: 864-869
• Published Date: 27-02-2026
• Published In: Iconic Research And Engineering Journals
• Publisher: IRE Journals
• e-ISSN: 2456-8880
• Volume/Issue: Volume 7 Issue 2 August-2023

Abstract

This research presents the synthesis, optical and electrical studies of Si quantum dots prepared by Physical Vapour Condensation Technique at the working pressure of 15 Torr and 20 Torr. The synthesized quantum dots were characterized by FESEM, X-ray diffraction and UV/VIS/NIR spectroscopy. The X-ray diffraction pattern of synthesized quantum dots shows the amorphous nature. FESEM images suggest that the size of quantum dots varies from 6-8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed. The temperature dependence of dc conductivity of Si quantum dots films have also been studied in the temperature range 300 to 450. It is evident that the dc conductivity (dc) increases exponentially with increasing temperature, indicating that conduction in these quantum dots is through an activated process which also shows the semiconducting performance of synthesized quantum dots.

Keywords

Si Quantum Dots, Thin Films, XRD, Optical Properties, Electrical Properties

Citations

IRE Journals:
Archana Srivastava "Studies of Silicon Quantum Dots Thin Films Deposited Under Disparate Ambient Argon Pressures" Iconic Research And Engineering Journals Volume 7 Issue 2 2023 Page 864-869 https://doi.org/10.64388/IREV7I2-1714667

IEEE:
Archana Srivastava "Studies of Silicon Quantum Dots Thin Films Deposited Under Disparate Ambient Argon Pressures" Iconic Research And Engineering Journals, 7(2) https://doi.org/10.64388/IREV7I2-1714667