Home / Current Issue / Paper 1704215
Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process.
Subject area: Science,Engineering and Technology · Area of research: Electronic Chip Formation
Abstract
The Czochralski process, a technique of growing crystal that is employed to get lone crystals of semiconductors, metals, salts, and gemstone, is employed in growing high-purity semiconductor grade silicon ingot that are sliced into wafer-the fundamental material for integrated circuit (IC) fabrication. The wafers obtained from silicon ingots grown through the Czochralski process have:better resistance to thermic strain, better rate of fabrication, low cost of production, and immense oxygen concentration that provides the chances of internal gettering. This paper outlines the chain of the different processing steps involved in integrating wafers gotten from silicon crystal obtained from the Czochralski growth process.
Keywords
Czochralski, Wafer, integrated circuit, silicon, crystal, Gettering.
References
[1] Robert, R.S., IEEE Spectrum archive, 34 (6), p.52-59, 1997
[2] Oyubu, A.O and Okpeki, U.K (2020) Journal of Engineering Studies and Research 26(3), pp 165-172
[3] E. Talik∗ and M. Oboz(2013), Czochralski Method for Crystal Growth of Reactive Intermetallics Acta Physica Polonica A, Vol. 124(2), pp 340-343
[4] Kelemen et al (1958) Method of Melting Silicon, United States Patent Office 3,156,549 Patented Nov. 10, 1964
[5] John Wiley & Sons, Inc M.P Groover, 2002: Fundamentals of modern manufacturing.
[6] http://inst.eecs.berkely.edu
[7] www.circuitstoday.com/chemical-vapour deposition-cvd
[8] https://fenix technico.uliboa.
[9] Federico et al (2004) Silicon Sacrificial Dry Layer Etching (SSLDE) for Free Standing RF MEMS architectures” http://cmi.epl.ch/etch/MEMS03.pdf
[10] Integrated circuit Engineering Corporation
[11] Jeffry J. Sniegowski, (1996) “Chemical- Mechanical Polishing: Enhancing the Manufacturability of MEMS”, SPIE Vol. 2879, pp.104-115.
[12] Chien et al, University of California Berkeley, CA:
[13] www.circuitstoday.com/metallization-process
[14] Van Zant, P. (2004): Microchip Fabrication (4th Edition) McGraw-Hill, New York
How to cite this paper
@article{1704215,
author = {Oyubu, Akpovi Oyubu, Onyeoru, H. C, Iloh, J. P},
title = {Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process.},
journal = {Iconic Research And Engineering Journals},
year = {2023},
volume = {6},
number = {10},
pages = {14-21},
issn = {2456-8880},
url = {https://www.irejournals.com/formatedpaper/17042151.pdf},
abstract = {The Czochralski process, a technique of growing crystal that is employed to get lone crystals of semiconductors, metals, salts, and gemstone, is employed in growing high-purity semiconductor grade silicon ingot that are sliced into wafer-the fundamental material for integrated circuit (IC) fabrication. The wafers obtained from silicon ingots grown through the Czochralski process have:better resistance to thermic strain, better rate of fabrication, low cost of production, and immense oxygen concentration that provides the chances of internal gettering. This paper outlines the chain of the different processing steps involved in integrating wafers gotten from silicon crystal obtained from the Czochralski growth process.},
keywords = {Czochralski, Wafer, integrated circuit, silicon, crystal, Gettering.},
month = {April},
}