Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process.

@article{1704215,
      author = {Oyubu, Akpovi Oyubu, Onyeoru, H. C, Iloh, J. P},
      title = {Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process.},
      journal = {Iconic Research And Engineering Journals},
      year = {2023},
      volume = {6},
      number = {10},
      pages = {14-21},
      issn = {2456-8880},
      url = {https://www.irejournals.com/formatedpaper/17042151.pdf},
      abstract = {The Czochralski process, a technique of growing  crystal that is employed to get  lone crystals of semiconductors, metals, salts, and gemstone, is employed in growing high-purity semiconductor grade silicon ingot that are sliced into wafer-the fundamental material for integrated circuit (IC) fabrication. The wafers obtained from silicon ingots grown through the Czochralski process have:better resistance to thermic strain, better rate of fabrication, low cost of production, and immense oxygen concentration that provides the chances of internal gettering. This paper outlines the chain of the different processing steps involved in integrating wafers gotten from silicon crystal obtained from the Czochralski growth process.},
      keywords = {Czochralski, Wafer, integrated circuit, silicon, crystal, Gettering.},
      month = {April},
  }