Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process.
  • Author(s): Oyubu, Akpovi Oyubu ; Onyeoru, H. C ; Iloh, J. P
  • Paper ID: 1704215
  • Page: 14-21
  • Published Date: 01-04-2023
  • Published In: Iconic Research And Engineering Journals
  • Publisher: IRE Journals
  • e-ISSN: 2456-8880
  • Volume/Issue: Volume 6 Issue 10 April-2023
Abstract

The Czochralski process, a technique of growing crystal that is employed to get lone crystals of semiconductors, metals, salts, and gemstone, is employed in growing high-purity semiconductor grade silicon ingot that are sliced into wafer-the fundamental material for integrated circuit (IC) fabrication. The wafers obtained from silicon ingots grown through the Czochralski process have:better resistance to thermic strain, better rate of fabrication, low cost of production, and immense oxygen concentration that provides the chances of internal gettering. This paper outlines the chain of the different processing steps involved in integrating wafers gotten from silicon crystal obtained from the Czochralski growth process.

Keywords

Czochralski, Wafer, integrated circuit, silicon, crystal, Gettering.

Citations

IRE Journals:
Oyubu, Akpovi Oyubu , Onyeoru, H. C , Iloh, J. P "Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process." Iconic Research And Engineering Journals Volume 6 Issue 10 2023 Page 14-21

IEEE:
Oyubu, Akpovi Oyubu , Onyeoru, H. C , Iloh, J. P "Modern Circuit Integration Techniques: Integrated Circuit Processing Sequence of Wafers Obtained from Czochralski Crystal Growth Process." Iconic Research And Engineering Journals, 6(10)